any changing of specification will not be informed individual BC847BV dual npn transistors plastic-encapsulate transistors r o h s c o m p l i a n t p r o d u c t * epitaxial die construction (bc857bv) * complementary pnp type available f e a t u r e s * ultra-small surface mount package http://www.secosgmbh.com elektronische bauelemente 23-mar-2007 rev. a page 1 of 2 maximum ratings* t a =25 unless otherwise noted . symbol parameter value units v cbo col l ector-ba s e v o l t age 5 0 4 5 6 0.1 0.15 150 - 5 5 - 1 5 0 v ce o coll ector-emitter v o lt age v v eb o emitter-base v o lt ag e v i c col l ector cur r e n t -conti n u o us a p c col l ector diss i p a ti o n w v c o c o t j junctio n t e mperature t st g s t orage t e mpe r ature r q ja thermal resistance. junction to ambient air 833 c/w o sot-563 dimensions in inches and (millimeters) . 0 5 1 ( 1 . 3 0 ) . 0 4 3 ( 1 . 1 0 ) . 0 1 2 ( 0 . 3 0 ) . 0 0 4 ( 0 . 1 0 ) . 0 6 7 ( 1 . 7 0 ) . 0 5 9 ( 1 . 5 0 ) . 0 6 7 ( 1 . 7 0 ) . 0 5 9 ( 1 . 5 0 ) . 0 2 2 ( 0 . 5 5 ) . 0 1 8 ( 0 . 4 5 ) . 0 1 1 ( 0 . 2 7 ) . 0 0 7 ( 0 . 1 7 ) . 0 0 2 ( 0 . 0 5 ) . 0 0 0 ( 0 . 0 0 ) . 0 2 4 ( 0 . 6 0 ) . 0 2 1 ( 0 . 5 2 5 ) . 0 0 6 ( 0 . 1 6 ) . 0 0 4 ( 0 . 0 9 ) 7 o r e f . 7 o r e f . marking:k 4 v e l e c t r i c a l c h a r a c t e r i s t i c s ( t a m b = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d ) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e v ( b r ) c b o i c = 1 0 m a , i e = 0 5 0 v c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e v ( b r ) c e o i c = 1 0 m a , i b = 0 4 5 v e m i t t e r - b a s e b r e a k d o w n v o l t a g e v ( b r ) e b o i e = 1 m a , i c = 0 6 v c o l l e c t o r c u t - o f f c u r r e n t i c b o v c b = 3 0 v , i e = 0 1 5 n a e m i t t e r c u t - o f f c u r r e n t i e b o v e b = 5 v , i c = 0 1 0 0 n a d c c u r r e n t g a i n h f e ( 1 ) v c e = 5 v , i c = 2 m a 2 0 0 4 5 0 c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v c e ( s a t ) i c = 1 0 m a , i b = 0 . 5 m a i c = 1 0 0 m a , i b = 5 m a 1 0 0 3 0 0 m v b a s e - e m i t t e r s a t u r a t i o n v o l t a g e v b e ( s a t ) i c = 1 0 m a , i b = 0 . 5 m a i c = 1 0 0 m a , i b = 5 m a 7 0 0 9 0 0 m v b a s e - e m i t t e r v o l t a g e v b e v c e = 5 v , i c = 2 m a v c e = 5 v , i c = 1 0 m a 5 8 0 6 6 0 7 0 0 7 7 0 m v t r a n s i t i o n f r e q u e n c y f t v c e = 5 v , i c = 1 0 m a , f = 1 0 0 m h z m h z o u t p u t c a p a c i t a n c e c o b v c b = 1 0 v , i e = 0 , f = 1 m h z 4 . 5 p f 1 0 0 nois e figure nf v ce =5 v , rs=2 k ? , f= 1khz,bw = 200hz 10 db
a page 2 of 2 BC847BV dual npn transistors plastic-encapsulate transistors http://www.secosgmbh.com elektronische bauelemente any changing of specification will not be informed individual 23-mar-2007 rev.
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